PDF MJW16010A Data sheet ( Hoja de datos )

Número de pieza	MJW16010A
Descripción	POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW16010A/D ™Designer's Data Sheet NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Inductive Fall Time — 100_C (Typ) 90 ns Inductive Crossover Time — 100_C (Typ) 900 ns Inductive Storage Time — 100_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents • Extended FBSOA Rating Using Ultra–fast Rectifiers ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Extremely High RBSOA Capability ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current— Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous — Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range Symbol VCEO VCEV VEB IC ICM IB IBM PD TJ, Tstg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case RθJC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purposes: TL 1/8″ from Case for 5 Seconds ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Value 500 1000 6 15 20 10 15 135 54 1.09 – 55 to 150 Max 0.92 275 Unit Vdc Vdc Vdc Adc Adc Watts W/_C IC Unit _C/W _C MJW16010A* Motorola Preferred Device POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS CASE 340F–03 TO–247AE Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 3 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page MJW16010A Table 1. Inductive Load Switching +15 1 µF Drive Circuit 150 Ω 100 Ω 100 µF MTP8P10 MTP8P10 +10 50 Ω MPF930 MPF930 MUR105 RB1 A RB2 MTP12N10 500 µF 150 Ω MJE210 1 µF Voff Tektronix AM503 Scope — Tektronix P6302 or Equivalent 7403 or Equivalent [ Lcoil (ICpk) T1 VCC T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A. VCEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IC VCE(pk) VCE IB IC A T.U.T. T1 + V IB 0V –V IC(pk) IB1 IB2 L 1N4246GP Vclamp VCC IC(pk) VCE(pk) 90% VCE(pk) 90% IC(pk) IC tsv trv tfi tti tc VCE IB 90% IB1 10% VCE(pk) 10% IC(pk) 2% IC t, TIME Figure 12. Inductive Switching Measurements 10 9 8 7 6 IB1 = 2 A 5 4 1A 3 IC = 10 A 2 TC = 25°C 1 0 01 2 3 4 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 5 Figure 13. Peak Reverse Base Current H.P. 214 OR EQUIV. P.G. td and tr IC IB RB = 8.5 Ω 50 T.U.T. RL VCC Vin 0V ≈ 11 V tr ≤ 15 ns Tektronix AM503 P6302 or Equivalent VCC RL IC IB 250 Vdc 25 Ω 10 A 1.3 A Table 2. Resistive Load Switching +15 ts and tf 1 µF 150 Ω 100 Ω 100 µF MTP8P10 V(off) adjusted to give specified off drive +10 V 50 Ω MPF930 MPF930 MUR105 VCC IC IB1 IB2 RB1 RB2 RL 250 V 10 A 500 µF 1.3 A Voff Per Spec 11.5 Ω Per Spec 25 Ω 150 Ω A MJE210 IB 1 µF T.U.T. MTP8P10 RB1 A RB2 MTP12N10 *IC RL VCC Motorola Bipolar Power Transistor Device Data 5 5 Page

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