|
|
PDF MJW16012 Data sheet ( Hoja de datos )
| Número de pieza | MJW16012 | |
| Descripción | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MJW16012 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16010/D
MJ16010
™Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
• Switching Regulators
• Fast Turn–Off Times — TC = 100°C
• Inverters
50 ns Inductive Fall Time (Typ)
• Solenoids
90 ns Inductive Crossover Time (Typ)
• Relay Drivers
800 ns Inductive Storage Time (Typ)
• Motor Controls
• 100_C Performance Specified for:
• Deflection Circuits
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
MJ16010 MJW16010
Symbol MJ16012 MJW16012 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
450
850
6.0
15
20
10
15
1 75 135
100 53 8
1.0 1.11
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg – 65 to 200 – 55 to 150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering
TL
Purposes, 1/8″ from Case for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv w(1) Pulse Test: Pulse Width 50 µs, Duty Cycle 10%
1.0 0.93
275
_C/W
_C
MJW16010
MJ16012*
MJW16012*
*Motorola Preferred Device
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ16010
MJ16012
CASE 340F–03
TO–247AE
MJW16010
MJW16012
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJ16010 MJW16010 MJ16012 MJW16012
5000
3000 VBE(off) = 0 V
2000
2.0 V
1000 5.0 V
500
5000
3000
2000
VBE(off) = 0 V
1000 2.0 V
700
500 5.0 V
300
200
100
0.07
0.05
1.5
2.0
3.0
βf* = 5.0
TC = 75°C
VCC = 20 V
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
15
300
200
βf* = 10
100
TC = 75°C
VCC = 20 V
0.05
1.5
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
15
Figure 7. Storage Time
Figure 8. Storage Time
1000
500 VBE(off) = 0 V
300
200 5.0 V
100
50 βf* = 5.0
TC = 75°C
20 VCC = 20 V
2.0 V
10
1.5 2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time
15
1000
500
300 VBE(off) = 0 V
200
100
50
βf* = 10
TC = 75°C
20 VCC = 20 V
2.0 V
5.0 V
10
1.5
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Collector Current Fall Time
15
1500
1000
500 VBE(off) = 0 V
300
200 5.0 V
100 βf* = 5.0
50
TC = 75°C
VCC = 20 V
2.0 V
20
15
1.5 2.0
*βf =
IC
IB1
3.0 5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Crossover Time
10
15
1500
1000
500
VBE(off) = 0 V
300
200
100 2.0 V
50 βf* = 10
TC = 75°C
20 VCC = 20 V
15
1.5 2.0
3.0
5.0 V
5.0 7.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Crossover Time
15
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MJW16012.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MJW16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS | Motorola Semiconductors |
| MJW16010 | NPN SILICON POWER TRANSISTORS |  ON |
| MJW16010 | SILICON POWER TRANSISTOR |  SavantIC |
| MJW16010 | Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-247AE |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |