PDF MJW16018 Data sheet ( Hoja de datos )

Número de pieza	MJW16018
Descripción	NPN Silicon Power Transistors
Fabricantes	ON
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D ™Designer's Data Sheet NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: • Switching Regulators • Inverters • Solenoids • Relay Drivers • Motor Controls • Deflection Circuits • Collector–Emitter Voltage — VCEV = 1500 Vdc • Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 110 ns Inductive Crossover Time — 100_C (Typ) 4.5 µs Inductive Storage Time — 100_C (Typ) • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ— Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous — Peak(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C Derate above TC = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range Symbol VCEO(sus) VCEV VEB IC ICM IB IBM PD TJ, Tstg MJ16018 MJW16018 800 1500 6 10 15 8 12 175 100 1 – 65 to 200 125 50 1 – 55 to 150 Unit Vdc Vdc Vdc Adc Adc Watts W/_C _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case RθJC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering TL ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ5 Seconds ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle 10%. Max 11 275 Unit _C/W _C MJ16018* MJW16018* *Motorola Preferred Device POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS CASE 1–07 TO–204AA MJ16018 CASE 340F–03 TO–247AE MJW16018 Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 1 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page MJ16018 MJW16018 100 SECOND BREAKDOWN 80 DERATING 60 THERMAL DERATING 40 20 MJ16018 MJW16018 0 0 40 80 120 160 TC, CASE TEMPERATURE (°C) Figure 15. Power Derating 200 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case tem- perature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 16. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable dur- ing reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA character- istics. 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 RθJC(t) = r(t) RθJC RθJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @ t1 TJ(pk) – TC = P(pk) RθJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 Figure 16. Thermal Response 1.0 k Motorola Bipolar Power Transistor Device Data 5 5 Page

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