MJW16110 Datasheet PDF - ON
| Part Number | MJW16110 | |
| Description | NPN Silicon Power Transistors | |
| Manufacturers | ON | |
| Logo |  |
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There is a preview and MJW16110 download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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ON Semiconductort
NPN Silicon Power Transistors
SWITCHMODEt Bridge Series
. . . specifically designed for use in half bridge and full bridge off
line converters.
• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
• Collector–Emitter Breakdown — V(BR)CES — 650 V
• State–of–Art Bipolar Power Transistor Design
• Fast Inductive Switching:
tfi = 25 ns (Typ) @ 100_C
tc = 50 ns (Typ) @ 100_C
tsv = 1 µs (Typ) @ 100_C
• Ultrafast FBSOA Specified
• 100_C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol MJ16110 MJW16110 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Pulsed (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Pulsed(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerated above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
VCEO(sus)
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
400
650
6
15
20
10
15
175
100
1
–65 to 200
135
54
1.09
–55 to 150
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction to Case
RθJC
1
0.92 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSoldering Purposes 1/8″ from Case
for 5 Seconds
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
275
_C
MJ16110 *
MJW16110 *
*Not Recommended for New Design
POWER TRANSISTORS
15 AMPERES
400 VOLTS
175 AND 135 WATTS
CASE 1–07
TO–204AA
(FORMERLY TO–3)
MJ16110
CASE 340F–03
TO–247AE
MJW16110
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
MJ16110/D
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MJ16110 MJW16110
+15
1 µF
Drive Circuit
150 Ω 100 Ω
100 µF
MTP8P10
+10
50 Ω
MPF930
MPF930
MUR105
500 µF
150 Ω
MJE210
Table 1. Inductive Load Switching
MTP8P10
RB1
A
RB2
MTP12N10
1 µF
VCEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 20 mA
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
RBSOA
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
Voff
*Tektronix AM503
*P6302 or Equivalent
Scope — Tektronix
7403 or Equivalent
Lcoil (ICpk)
t1 [ VCC
T1 adjusted to obtain IC(pk)
Note: Adjust Voff to obtain desired VBE(off) at Point A.
T1
0V
A
+āV
-āV
*IB
IC
VCE(pk)
VCE
IB
*IC
T.U.T
.
IC(pk)
IB1
IB2
L
1N4246GP
Vclamp
VCC
H.P. 214
OR
EQUIV.
P.G.
td and tr
*IC
*IB
RB = 8.5 Ω
50
T.U.T
.
RL
VCC
Vin
0V
≈ 11 V
tr ≤ 15 ns
*Tektronix AM503
*P6302 or Equivalent
VCC 250 Vdc
RL 25 Ω
IC 10 A
IB 1 A
Table 2. Resistive Load Switching
+15
ts and tf 1 µF
150 Ω 100 Ω
100 µF
MTP8P10
V(off) adjusted
to give specified
off drive
VCC 250 V
IC 10 A
IB1 1.0 A
IB2 Per Spec
RB1 15 Ω
RB2 Per Spec
RL 25 Ω
+10 V
50 Ω
MPF930
MPF930
MUR105
500 µF
Voff
150 Ω
A
MJE210
*IB
1 µF
T.U.T
.
MTP8P10
RB1
A
RB2
MTP12N10
*IC RL
VCC
http://onsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MJW16110 electronic component. |
| Information | Total 12 Pages | |
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| Download | [ MJW16110.PDF Datasheet ] | |
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