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PDF MJW16206 Data sheet ( Hoja de datos )
| Número de pieza | MJW16206 | |
| Descripción | Power Transistor | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SCANSWITCH™
NPN Bipolar Power Deflection Transistors
For High and Very High Resolution CRT Monitors
The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
power transistors. They are specifically designed for use in horizontal deflection
circuits for high and very high resolution, monochrome and color CRT monitors.
• 1200 Volt VCES Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Maximum Repetitive Emitter–Base Avalanche Energy Specified (Industry First)
• High Current Capability: Performance Specified at 6.5 Amps
Continuous Rating — 12 Amps Max
Pulsed Rating — 15 Amps Max
• Isolated MJF16206 is UL Recognized
• Fast Switching: 100 ns Inductive Fall Time (Typ)
1000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage
0.25 Volts (Typ) at 6.5 Amps Collector Current
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 V (Min)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIsolation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(RMS for 1 sec., TA = 25_C,
Relative Humidity 30%)
Figure 19
Figure 20
Symbol
VCES
VCEO(sus)
VEBO
VISOL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Collector Current — Pulsed (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Pulsed (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRepetitive Emitter–Base Avalanche Energy
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 100_C
Derated above 25_C
IC
ICM
IB
IBM
W(BER)
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Temperature
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance — Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLead Temperature for Soldering Purposes 1/8″
TL
from the Case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
Value
1200
500
8.0
—
—
12
15
5.0
10
0.2
150
39
1.49
– 55 to + 150
Max
0.67
260
Unit
Vdc
Vdc
Vdc
Vrms
Adc
Adc
mjoules
Watts
W/_C
_C
Unit
_C/W
_C
SCANSWITCH is a trademark of Motorola Inc.
REV 3
©MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
Order this document
by MJW16206/D
MJW16206
POWER TRANSISTORS
12 AMPERES
1200 VOLTS — VCES
50 and 150 WATTS
CASE 340K–01
TO–247AE
1
1 page  
0.02 µF
+ V ≈ 11 V
100
H.P. 214
OR EQUIV.
P.G.
0
20
+
– 10 µF
2N6191
RB1
T1
0V
+V
– V *IC
L
≈ – 35 V
0.02 µF
RB2
50
RBSOA
500
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired IB1
+–
1 µF
2N5337
100 – V
Note: Adjust – V to obtain desired VBE(off) at Point A.
AA
T.U.T.
50 *IB
MR856
VCC
Vclamp
V(BR)CEO
L = 10 mH
RB2 = ∞
VCC = 20 Volts
[ Lcoil (ICpk)
T1 VCC
T1 adjusted to obtain IC(pk)
*Tektronix P–6042 or Equivalent
Figure 10. RBSOA/V(BR)CEO(sus) Test Circuit
MJW16206
IC
VCE(pk)
VCE
IC(pk)
IB1
IB
IB2
1
D = 0.5
0.5
0.2 0.2
0.1
0.1
0.05
SINGLE PULSE
0.01
0.1
1
RθJC(t) = r(t) RθJC
RθJC = 0.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10 100
t, TIME (ms)
Figure 11. Thermal Response
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1K
10K
VCE (1000 V MAX)
10 µF MUR8100
+15
1 µF
100 Ω
150 Ω
100 µF
MTP8P10
10 mH
MTP8P10 RB1
MUR1100
MPF930
+10 MPF930
MUR105
T.U.T.
MUR105
RB2
50 Ω
MTP12N10
500 µF
150 Ω
MJE210
1 µF
VOff
Note: Test Circuit for Ultrafast FBSOA
Note: RB2 = 0 and VOff = – 5 Volts
Figure 12. Switching Safe Operating Area
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MJW16206.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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