PDF MJW21194 Data sheet ( Hoja de datos )

Número de pieza	MJW21194
Descripción	Silicon Power Transistors
Fabricantes	ON
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No Preview Available ! MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain • Excellent Gain Linearity • High SOA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.43 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RθJC RθJA Max 0.7 40 Unit °C/W °C/W http://onsemi.com 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 1 BASE EMITTER 3 1 BASE EMITTER 3 MARKING DIAGRAM MJW2119x AYWWG 123 TO−247 CASE 340L STYLE 3 1 BASE 3 EMITTER 2 COLLECTOR x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJW21193G TO−247 (Pb−Free) 30 Units/Rail MJW21194G TO−247 (Pb−Free) 30 Units/Rail © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 5 1 Publication Order Number: MJW21193/D 1 page MJW21193 (PNP) MJW21194 (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10000 TC = 25°C 10000 Cib TC = 25°C Cib 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 15. MJW21193 Typical Capacitance 1000 f(test) = 1 MHz) 100 0.1 1.0 Cob 10 100 VR, REVERSE VOLTAGE (VOLTS) Figure 16. MJW21194 Typical Capacitance 1.2 1.1 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 FREQUENCY (Hz) 100000 Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 5 Page

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