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MKP1V160 데이터시트 PDF




ON에서 제조한 전자 부품 MKP1V160은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MKP1V160 자료 제공

부품번호 MKP1V160 기능
기능 Sidac High Voltage
제조업체 ON
로고 ON 로고


MKP1V160 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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MKP1V160 데이터시트, 핀배열, 회로
MKP1V120 Series
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on−state. Conduction
will continue like a Triac until the main terminal current drops below
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable
operation. Applications are:
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered — File #E116110
Device Marking: Logo, Device Type, e.g., MKP1V120, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz,
TJ = − 40 to 125°C)
MKP1V120, MKP1V130, MKP1V160
MKP1V240
VDRM,
VRRM
"90
"180
V
On-State Current RMS
(TL = 80°C, Lead Length = 3/8,
All Conduction Angles)
IT(RMS)
"0.9
A
Peak Non−repetitive Surge Current
(60 Hz One Cycle Sine Wave,
TJ = 125°C)
ITSM
"4.0
A
Operating Junction Temperature Range
TJ
−40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. 6
1
http://onsemi.com
SIDACS ( )
0.9 AMPS RMS
120 − 240 V
MT1
MT2
MARKING
DIAGRAM
MKP
1V1xx0
AYYW
AXIAL LEAD
CASE 59−10
DO−41
PLASTIC
xx = 12, 13, 16 or 24
A = Assembly Location
YY = Year
W = Work Week
ORDERING INFORMATION
Device
MKP1V120RL
Package
DO−41
Shipping
5000 Tape & Reel
MKP1V130RL
MKP1V160
MKP1V160RL
MKP1V240
DO−41
DO−41
DO−41
DO−41
5000 Tape & Reel
1000 Units / Bulk
5000 Tape & Reel
1000 Units / Bulk
MKP1V240RL DO−41 5000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MKP1V120/D




MKP1V160 pdf, 반도체, 판매, 대치품
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
MKP1V120 Series
0.5 1.0 2.0
ZqJL(t) = RqJL r(t)
DTJL = Ppk RqJL[r(t)]
where:
tp TIME
DTJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp.
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + DTJL
5.0 10
20
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k
t, TIME (ms)
Figure 5. Thermal Response
1.4
1.0 1.2
1.0
0.9 0.8
0.6
0.8
−60 −40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
0.4
−60 −40 −20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current
100
10 IPK
10%
tw
1.0
0.1 1.0 10
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
100
http://onsemi.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
MKP1V160

Sidac High Voltage

ON
ON
MKP1V160RL

Sidac High Voltage

ON
ON

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