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부품번호 | ML1XX6 기능 |
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기능 | FOR OPTICAL INFORMATION SYSTEMS | ||
제조업체 | Mitsubishi | ||
로고 | |||
MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
ML1016R, ML120G6
DESCRIPTION
ML1XX6 is a high power AlGaInP semiconductor laser
which provides a stable, single transverse mode
oscillation with emission wavelength of 658-nm and
standard CW light output of 30mW.
ML1XX6 has a window-mirror-facet which improves
the maximum output power. That leads to highly
reliable and high-power operation.
ABSOLUTE MAXIMUM RATINGS Note 1)
Symbol
Parameter
Po Light output power
VRL
VRD
Reverse voltage (laser diode)
Reverse voltage (Photodiode)
FEATURES
• High Power: 30mW (CW), 50mW (pulse)
• Visible Light: 658nm (typ)
APPLICATION
DVD(Digital Versatile Disc)-RAM/RW Drive
Conditions
CW
Pulse(Note 2)
-
-
Ratings
35
50
2
30
Unit
mW
V
V
IFD Forward current (Photodiode)
- 10 mA
Tc Case temperature
-
-10 ~ +60
°C
Tstg Storage temperature
-
-40 ~ +100
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1µs
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25˚C)
Symbol
Parameter
Test conditions
Ith Threshold current
Iop Operating current
CW
CW,Po=30mW
Vop Operating voltage
CW,Po=30mW
η Slope efficiency
CW,Po=30mW
λp Peak wavelength
CW,Po=30mW
Beam divergence angle
θ// (parallel)
CW,Po=30mW
θ⊥
Beam divergence angle
(perpendicular)
CW,Po=30mW
Im
Monitoring output current
CW,Po=30mW,VRD=1V
(Photodiode) (only for ML1016R) RL=10Ω(Note 3)
ID Dark current (Photodiode)
Ct Capacitance (Photodiode)
VRD=10V
f=1MHz,VRD=5V
Note 3:RL=the load resistance of photodiode for ML1016R
Min.
-
-
-
-
655
7
17
0.05
-
-
Typ.
40
80
2.7
0.7
658
8.5
22
0.35
-
7
Max
70
120
3.0
-
666
11
26
2.5
0.5
-
Unit
mA
mA
V
mW/mA
nm
°
°
mA
mA
pF
MITSUBISHI
ELECTRIC
(1/4)
as of December '99
Typical Characteristics
668
666 Po=30mW
CW
664
662
660
~0.17nm/°C
658
656
654
0
10 20 30 40 50 60 70
Case Temperature, Tc (°C)
MITSUBISHI LASER DIODES
ML1XX6 SERIES
FOR OPTICAL INFORMATION SYSTEMS
661
660
Tc=25°C
CW
659 ~0.05nm/mW
658
657
656
0
10 20 30 40 50
Light Output Power, Po (mW)
Peak Wavelength vs. Temperature Peak Wavelength vs. Light Output Power
1600
1400
1200
25°C
NA=0.5
TE Mode
1000
800
600
400
200
0
0 10 20 30 40 50
Light Output Power, Po (mW)
Polarization Ratio
MITSUBISHI
ELECTRIC
(4/4)
as of December '99
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다운로드 | [ ML1XX6.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
ML1XX10 | FOR OPTICAL INFORMATION SYSTEM | Mitsubishi |
ML1XX14 | FOR OPTICAL INFORMATION SYSTEM | Mitsubishi |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |