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PDF NE68119-T1 Data sheet ( Hoja de datos )

Número de pieza NE68119-T1
Descripción NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
Fabricantes NEC　
Logotipo NEC Logotipo



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NEC's NPN SILICON HIGH NE681
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
b e r s• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
P L E A S E N O T E : p a r t n u m12 dB at 2 GHz
n o t• LOW COST
00 (CHIP)
The fotlhloiswdinagtasfhoerent eawredefsoirgn.DESCRIPTION
f r o m e n d e d o f f i c eNEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
r e c o m m c a l l s a l e stions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
P l e a s euse a single matching point to simultaneously achieve both low
dNeEt a6 i8l1s 3: 5noise and high gain.
18 (SOT 343 STYLE)
35 (MICRO-X)
19 (3 PIN ULTRA
SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
AND MAG vs. FREQUENCY
MSG
VCE = 3 V, IC = 5 mA
20
3.0 MAG
2.0
1.0
0.5
GA
NF
1.0 2.0 3.0
Frequency, f (GHz)
10
0
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)

1 page




NE68119-T1 pdf
NE681 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES
400
300
200
NE68133
100
NE68135
0
0
50 100 150
Ambient Temperature, TA (°C)
200
FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500
VCE = 8 V
300
200
100
70
50
30
20
10
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)
NE68133
NOISE FIGURE
vs. COLLECTOR CURRENT
3.0
VCE = 8 V
f = 1 GHz
2.5
2.0
1.5
1.0
0.5
0
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)
COLLECTOR TO BASE CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2 NE68133
NE68135
0.1
1
23
5 7 10
20 30
Collector to Base Voltage, VCB (V)
50
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
50
VCE = 8 V
30
20
10
7
5
3
2
1
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)
NE68100 & NE68135
NOISE FIGURE
vs. COLLECTOR CURRENT
3.0
VCE = 8 V
f = 2 GHz
2.5
2.0
1.5
1.0
0.5
0
1
2 3 5 7 10
20 30 50
Collector Current, IC (mA)

5 Page





NE68119-T1 arduino
NE681 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE68139
VCE = 8 V, IC = 7 mA
FREQUENCY
S11
(MHz)
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
2000
3000
4000
5000
0.764
0.675
0.569
0.481
0.432
0.398
0.374
0.354
0.339
0.332
0.333
0.343
0.332
0.343
0.348
0.414
0.502
0.595
0.650
-28
-55
-76
-94
-110
-120
-133
-141
-152
-159
-166
-174
180
173
171
150
126
110
97
S21
MAG
ANG
17.806
15.233
12.659
10.620
8.886
7.696
6.888
6.073
5.422
4.963
4.576
4.264
3.912
3.656
3.433
2.656
1.829
1.426
1.119
156
138
126
116
107
102
97
93
88
85
81
78
76
73
71
56
38
17
1
S12
MAG
ANG
0.002
0.008
0.018
0.025
0.035
0.043
0.046
0.056
0.055
0.066
0.069
0.076
0.080
0.089
0.098
0.129
0.192
0.256
0.317
53
70
61
59
59
58
59
59
60
61
62
62
63
63
66
60
60
50
44
S22
MAG ANG
0.944
0.855
0.734
0.698
0.602
0.589
0.530
0.522
0.493
0.493
0.488
0.457
0.467
0.449
0.447
0.388
0.323
0.302
0.343
-12
-19
-22
-25
-24
-24
-26
-25
-28
-25
-28
-27
-29
-29
-29
-40
-63
-95
-126
K MAG1
(dB)
0.91 39.5
0.54 32.8
0.69 28.5
0.74 26.3
0.86 24.0
0.86 22.5
0.99 21.8
0.97 20.4
1.13 17.7
1.05 17.4
1.08 16.5
1.09 15.7
1.12 14.8
1.09 14.3
1.06 13.9
1.04 11.9
1.00 9.8
0.88 7.5
0.83 5.5
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | ∆ | 2 - |S11| 2 - |S22| 2 , ∆ = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain

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