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NEZ4450-4D 데이터시트 PDF




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부품번호 NEZ4450-4D 기능
기능 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
제조업체 NEC
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NEZ4450-4D 데이터시트, 핀배열, 회로
PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
10.7
12.0
FEATURES
• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996




NEZ4450-4D pdf, 반도체, 판매, 대치품
4W/8W C-BAND POWER-GaAs FET NEZ Series
8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 )
P1dB
GL
IDS GL IM3 ηadd
TEST CONDITIONS
PART NUMBER
(dBm)
*1
(dB)
(A)
(dB)
(dBc)
(%) VDS IDS FREQUENCY IM3 TEST
*2 *3, 4 *4
(RF OFF) BAND
FREQ.
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A)
(GHz)
(GHz) *5
NEZ3642-8D, 8DD 38.5 39.5 10.0 11.0 2.4 3.0 1.0 – 45 – 42 40 10 1.6 3.6 to 4.2
4.2
NEZ4450-8D, 8DD 38.5 39.5 9.5 10.5 2.4 3.0 1.0 – 45 – 42 37 10 1.6 4.4 to 5.0
5.0
NEZ5964-8D, 8DD 38.5 39.5 8.5 9.5 2.4 3.0 1.0 – 45 – 42 35 10 1.6 5.9 to 6.45 6.45
NEZ6472-8D, 8DD 38.5 39.5 7.5 8.5 2.4 3.0 1.0 – 45 – 42 32 10 1.6 6.4 to 7.2
7.2
NEZ7177-8D, 8DD 38.5 39.5 7.0 8.0 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.1 to 7.7
7.7
NEZ7785-8D, 8DD 38.5 39.5 6.5 7.5 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.7 to 8.5
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 8DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
()
100
VDS max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
4

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NEZ4450-4D 전자부품, 판매, 대치품
4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ5964-8D, 8DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID 40
(A)
3
Test Conditions:
VDS = 10.0 (V),
ID = 1.6 (A) (RF OFF),
Rg = 100 (),
f = 6.175 (GHz)
Pout
35
2
ID
30
1
25
0
20
25 30
Pin - Input Power - dBm
EFF
35
EFF
(%)
50
40
30
20
10
0
OUTPUT POWER vs. FREQUENCY
Test Conditions:
VDS = 10.0 (V),
ID = 1.6 (A) (RF OFF)
Rg = 100 ()
40
Pin = 32 dBm
35
Pin = 24 dBm
Pin = 22 dBm
30
5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
f - Frequency - GHz
NEZ6472-4D, 4DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
(A)
3
35
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 (),
f = 6.8 (GHz)
Pout
2
30
1
25
0
EFF
ID (%)
50
40
EFF 30
20
10
0
20 25 30
Pin - Input Power - dBm
OUTPUT POWER vs. FREQUENCY
40
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 ()
35 Pin = 29 dBm
30 Pin = 20 dBm
Pin = 18 dBm
25
5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8
f - Frequency - GHz
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
NEZ4450-4D

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC
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NEZ4450-4DD

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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