NEZ5964-4D Datasheet PDF - NEC
| Part Number | NEZ5964-4D | |
| Description | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | |
| Manufacturers | NEC | |
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PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
10.7
12.0
FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
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4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
110
100
Infinite Heat sink
90
80
70
60
50 –8D/–8DD
40
30 –4D/–4DD
20
10
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
NEZ3642-4D
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
(A)
2
35
Test Conditions:
Freq = 3.9 (GHz),
VDS = 10.0 (V), IDS = 0.8 (A),
Pout: Pin = 27.0 (dBm),
GL: Pin = 20.0 (dBm),
Rg = 200 (Ω)
Pout
1
30
0
25
ID
15 20 25
Pin - Input Power - dBm
EFF
(%)
EFF 50
40
30
20
10
0
NEZ3642-8D/8DD
NEZ4450-4D/4DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID 40
(A)
3
35
Test Conditions:
Freq = 3.9 (GHz),
VDS = 10.0 (V), IDS = 1.6 (A),
Pout: Pin = 31.0 (dBm),
GL: Pin = 20.0 (dBm),
Rg = 100 (Ω)
2
Pout
ID
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
(A)
3
35
Test Conditions:
Freq = 4.7 (GHz), VDS = 10.0 (V),
ID = 0.80 A, Rg = 200 Ω
Pout
2
30
30
1
25
0
20 25 30
Pin - Input Power - dBm
EFF
(%)
50
40
EFF 30
20
10
0
1
25
0
15 20 25
Pin - Input Power - dBm
ID EFF
(%)
50
EFF
40
30
20
10
0
30
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NEZ5964-4D electronic component. |
| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NEZ5964-4D.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| NEZ5964-4D | The function is 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET. NEC | |
| NEZ5964-4DD | The function is 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET. NEC | |
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