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부품번호 | NEZ6472-8D 기능 |
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기능 | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | ||
제조업체 | NEC | ||
로고 | |||
전체 18 페이지수
PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
PACKAGE DIMENSIONS (unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50 Ω are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
C1.5 4PLACES
SOURCE
R1.6 2PLACES
0.5±0.1
GATE
2.4
DRAIN
17.0±0.2
21.0±0.3
NEZ PART NUMBER
NEZ3642-4D, 8D, 8DD
NEZ4450-4D, 4DD/8D, 8DD
NEZ5964-4D, 4DD/8D, 8DD
NEZ6472-4D, 4DD/8D, 8DD
NEZ7177-4D, 4DD/8D, 8DD
NEZ7785-4D, 4DD/8D, 8DD
FREQUENCY BAND (GHz)
3.6 to 4.2
4.4 to 5.0
5.9 to 6.45
6.4 to 7.2
7.1 to 7.7
7.7 to 8.5
10.7
12.0
FEATURES
• Internally matched to 50 Ω
• High power output
• High linear gain
• High reliability
• Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
4W/8W C-BAND POWER-GaAs FET NEZ Series
8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Z S = ZL = 50 Ω)
P1dB
GL
IDS GL IM3 ηadd
TEST CONDITIONS
PART NUMBER
(dBm)
*1
(dB)
(A)
(dB)
(dBc)
(%) VDS IDS FREQUENCY IM3 TEST
*2 *3, 4 *4
(RF OFF) BAND
FREQ.
MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MAX. TYP. (V) (A)
(GHz)
(GHz) *5
NEZ3642-8D, 8DD 38.5 39.5 10.0 11.0 2.4 3.0 1.0 – 45 – 42 40 10 1.6 3.6 to 4.2
4.2
NEZ4450-8D, 8DD 38.5 39.5 9.5 10.5 2.4 3.0 1.0 – 45 – 42 37 10 1.6 4.4 to 5.0
5.0
NEZ5964-8D, 8DD 38.5 39.5 8.5 9.5 2.4 3.0 1.0 – 45 – 42 35 10 1.6 5.9 to 6.45 6.45
NEZ6472-8D, 8DD 38.5 39.5 7.5 8.5 2.4 3.0 1.0 – 45 – 42 32 10 1.6 6.4 to 7.2
7.2
NEZ7177-8D, 8DD 38.5 39.5 7.0 8.0 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.1 to 7.7
7.7
NEZ7785-8D, 8DD 38.5 39.5 6.5 7.5 2.4 3.0 1.0 – 45 – 42 30 10 1.6 7.7 to 8.5
8.5
Notes *1 Output power at 1dB gain compression point
*2 IDS values are specified at P1dB point.
*3 Gain flatness
*4 Applies to – 8DD option only
*5 IM3 test conditions: f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.
(Ω)
100
VDS max.
(V)
10
Rg max is the maximum series resistance between the gate supply and the FET gate.
4
4페이지 4W/8W C-BAND Power-GaAs FET NEZ Series
NEZ5964-8D, 8DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID 40
(A)
3
Test Conditions:
VDS = 10.0 (V),
ID = 1.6 (A) (RF OFF),
Rg = 100 (Ω),
f = 6.175 (GHz)
Pout
35
2
ID
30
1
25
0
20
25 30
Pin - Input Power - dBm
EFF
35
EFF
(%)
50
40
30
20
10
0
OUTPUT POWER vs. FREQUENCY
Test Conditions:
VDS = 10.0 (V),
ID = 1.6 (A) (RF OFF)
Rg = 100 (Ω)
40
Pin = 32 dBm
35
Pin = 24 dBm
Pin = 22 dBm
30
5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
f - Frequency - GHz
NEZ6472-4D, 4DD
Pout
(dBm) OUTPUT POWER vs. INPUT POWER
ID
(A)
3
35
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 (Ω),
f = 6.8 (GHz)
Pout
2
30
1
25
0
EFF
ID (%)
50
40
EFF 30
20
10
0
20 25 30
Pin - Input Power - dBm
OUTPUT POWER vs. FREQUENCY
40
Test Conditions:
VDS = 10.0 (V),
ID = 0.8 (A) (RF OFF),
Rg = 200 (Ω)
35 Pin = 29 dBm
30 Pin = 20 dBm
Pin = 18 dBm
25
5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 7.6 7.8
f - Frequency - GHz
7
7페이지 | |||
구 성 | 총 18 페이지수 | ||
다운로드 | [ NEZ6472-8D.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
NEZ6472-8D | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | NEC |
NEZ6472-8DD | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |