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Datasheet NIF5002N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NIF5002N | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per | ON | data |
2 | NIF5002ND | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per | ON | data |
3 | NIF5002NT1 | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per | ON | data |
4 | NIF5002NT3 | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per | ON | data |
NIF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NIF5002N | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per ON data | | |
2 | NIF5002ND | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per ON data | | |
3 | NIF5002NT1 | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per ON data | | |
4 | NIF5002NT3 | Self-Protected FET with Temperature and Current Limit NIF5002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per ON data | | |
5 | NIF5003N | Self-Protected FET
NIF5003N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible ON Semiconductor data | | |
6 | NIF62514 | Self-protected FET with Temperature and Current Limit NIF62514
Preferred Device
Self−protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart featur ON Semiconductor data | | |
7 | NIF9N05CL | Protected Power MOSFET NIF9N05CL Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package
http://onsemi.com Benefits
• High Energy Capability for Inductive Loads • Low Switching Noise Generation
Features
VDSS (Clamped) 52 V
RDS(ON) TYP 107 mW
ID MAX 2.6 ON Semiconductor mosfet | |
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