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부품번호 | MMBD110T1 기능 |
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기능 | Schottky Barrier Diodes | ||
제조업체 | ON | ||
로고 | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high–efficiency UHF and
VHF detector applications. Readily available to many other fast switching RF
and digital applications. They are housed in the SOT–323/SC–70 package
which is designed for low–power surface mount applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
• Available in 8 mm Tape and Reel
Order this document
BY MMBD110T1/D
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419A–02, STYLE 2
SOT-323/SC–70
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD110T1 = 4M
MMBD330T1 = 4T
MMBD770T1 = 5H
MMBD110T1
MMBD330T1
MMBD770T1
Symbol
VR
PF
TJ
Tstg
Value
7.0
30
70
120
– 55 to +125
– 55 to +150
Unit
Vdc
mW
°C
°C
Thermal Clad is a registered trademark of the Bergquist Company.
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1
MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD330T1
2.8
MMBD330T1
2.4
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0 3.0 6.0 9.0 12 15 18 21 24 27 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Total Capacitance
500
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 7. Minority Carrier Lifetime
10
MMBD330T1
1.0 TA = 100°C
TA = 75°C
0.1
TA = 25°C
0.01
0.001
0
6.0 12 18 24
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Reverse Leakage
100
MMBD330T1
10
TA = 85°C
TA = – 40°C
1.0
0.1
30 0.2
TA = 25°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Forward Voltage
1.2
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
4페이지 MMBD110T1 MMBD330T1 MMBD770T1
PACKAGE DIMENSIONS
A
L
3
S
1
B
2
VD
G
0.05 (0.002)
H
C RN
J
K
CASE 419–02
ISSUE G
SOT–323/SC–70
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.035 0.049
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
R 0.031 0.039
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.90 1.25
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
0.80 1.00
2.00 2.20
0.30 0.40
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
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부품번호 | 상세설명 및 기능 | 제조사 |
MMBD110T1 | Schottky Barrier Diodes | Motorola Semiconductors |
MMBD110T1 | Schottky Barrier Diodes | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |