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PDF MMBD2838LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBD2838LT1 | |
| Descripción | Monolithic Dual Switching Diodes | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD2837LT1/D
Monolithic Dual Switching Diodes MMBD2837LT1
MMBD2838LT1
3
CATHODE
ANODE
1
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
MMBD2837LT1
MMBD2838LT1
Peak Forward Current
Symbol
VRM
VR
IFM
Average Rectified Current
IO
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Value
75
30
50
450
300
150
100
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
MMBD2837LT1
MMBD2838LT1
V(BR)
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2837LT1
MMBD2838LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IR
CT
VF
trr
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
Min Max Unit
35 — Vdc
75 —
µAdc
— 0.1
— 0.1
— 4.0 pF
— 1.0 Vdc
— 1.0
— 1.2
— 4.0 ns
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBD2838LT1.PDF ] | |
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