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PDF MMBD914 Data sheet ( Hoja de datos )
| Número de pieza | MMBD914 | |
| Descripción | 350mW 100 Volt Silicon Epitaxial Diode | |
| Fabricantes | Micro Commercial Components | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBD914 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MCC
omponents
21201 Itasca Street Chatsworth
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MMBD914
Features
• Low Current Leakage
• Low Cost
• Small Outline Surface Mount Package
Pin Configuration
Top View
C
5D
A
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 357K/W Junction To Ambient
350mW 100 Volt
Silicon Epitaxial Diode
SOT-23
A
D
CB
FE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR 75V
VRM 100V
Average Rectified
Current
IO 150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
350mW
175°C
Peak Forward Surge
Current
IFSM
1.0A t=1s,Non-Repetitive
Maximum
Instantaneous
Forward Voltage
Maximum DC
VF .855V IFM = 10mA;
TJ = 25°C*
Reverse Current At IR 25nA TJ = 25°C
Rated DC Blocking
VR =20Volts
Voltage
Typical Junction
CJ 2pF Measured at
Capacitance
1.0MHz, VR=0V
Reverse Recovery Trr 4nS IF=10mA
Time
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
G HJ
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBD914.PDF ] | |
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