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MMBT2222ALT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222LT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2222LT1
MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
2222
2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 40
60 75
5.0 6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
ICEX
ICBO
IEBO
IBL
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
30 — Vdc
40 —
60 — Vdc
75 —
5.0 — Vdc
6.0 —
— 10 nAdc
— 0.01 µAdc
— 0.01
— 10
— 10
— 100 nAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1




MMBT2222ALT1 pdf, 반도체, 판매, 대치품
MMBT2222LT1 MMBT2222ALT1
200
IC/IB = 10
100 TJ = 25°C
70
50
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
30 td @ VEB(off) = 0
20
10
7.0
5.0
3.0
2.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
10
RS = OPTIMUM
8.0
IC = 1.0 mA, RS = 150
500 µA, RS = 200
RS = SOURCE
RS = RESISTANCE
100 µA, RS = 2.0 k
6.0 50 µA, RS = 4.0 k
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
50 100
Figure 7. Frequency Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
300
200 ts = ts – 1/8 tf
100
70
50 tf
30
20
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn – Off Time
10
f = 1.0 kHz
8.0
IC = 50 µA
100 µA
6.0 500 µA
1.0 mA
4.0
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current–Gain Bandwidth Product
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

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MMBT2222ALT1 전자부품, 판매, 대치품
PACKAGE DIMENSIONS
MMBT2222LT1 MMBT2222ALT1
A
L
3
BS
12
VG
C
D H KJ
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7

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