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PDF MMBT2222LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222LT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222LT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2222LT1
MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
2222
2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 40
60 75
5.0 6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
ICEX
ICBO
IEBO
IBL
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
30 — Vdc
40 —
60 — Vdc
75 —
5.0 — Vdc
6.0 —
— 10 nAdc
— 0.01 µAdc
— 0.01
— 10
— 10
— 100 nAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 11. “On” Voltages
MMBT2222LT1 MMBT2222ALT1
+0.5
0 RqVC for VCE(sat)
– 0.5
– 1.0
– 1.5
– 2.0 RqVB for VBE
– 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222LT1.PDF ] | |
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