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PDF MMBT3416LT3 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3416LT3 | |
| Descripción | General Purpose Amplifier(NPN Silicon) | |
| Fabricantes | ON | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3416LT3/D
General Purpose Amplifier
NPN Silicon
COLLECTOR
3
MMBT3416LT3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3416LT3 = GP
Symbol
VCEO
VEBO
IC
Value
40
4.0
100
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICBO1
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
40 — Vdc
4.0 — Vdc
— 100 nAdc
— 100 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1998
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
TYPICAL DYNAMIC CHARACTERISTICS
MMBT3416LT3
300
200
100
70
50
30
20
10
7.0
5.0
3.0
1.0
tr
td @ VBE(off) = 0.5 Vdc
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time
50 70 100
1000
700
500 ts
300
200
100 tf
70
50
30 VCC = 3.0 V
20
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
1.0 2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 14. Turn–Off Time
50 70 100
500
TJ = 25°C
f = 100 MHz
300
200
VCE = 20 V
5.0 V
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 15. Current–Gain — Bandwidth Product
10
TJ = 25°C
7.0 f = 1.0 MHz
Cib
5.0
Cob
3.0
2.0
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 16. Capacitance
20
50
20
VCE = 10 Vdc
10
7.0
f = 1.0 kHz
MPS3904
hfe ≈ 200 @ IC = 1.0 mA
TA = 25°C
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50 MPS3904
30 hfe ≈ 200 @ IC = 1.0 mA
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 18. Output Admittance
50 100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT3416LT3.PDF ] | |
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