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PDF MMBT3640 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3640 | |
| Descripción | PNP Switching Transistor | |
| Fabricantes | Fairchild | |
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March 2014
MMBT3640
PNP Switching Amplifier
Description
This device is designed for very high-speed saturated
switching at collector currents to 100 mA. Sourced
from process 65.
Ordering Information
Part Number
MMBT3640
Marking
2J
C
SOT-23
Mark: 2J
E
B
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ , TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature Range
Value
-12
-12
-4
-200
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJA
Total Device Dissipation
Derate Above TA = 25°C
Thermal Resistance, Junction to Ambient
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Max.
225
1.8
556
Unit
mW
mW/°C
°C/W
© 2001 Fairchild Semiconductor Corporation
MMBT3640 Rev. 1.1.0
1
www.fairchildsemi.com
1 page  
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MMBT3640.PDF ] | |
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