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PDF MMBT3904LT3G Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904LT3G | |
| Descripción | General Purpose Transistor (NPN Silicon) | |
| Fabricantes | ON | |
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MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
1
2
SOT−23 (TO−236)
CASE 318
Style 6
1AM
1AM = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3904LT1 SOT−23 3000 / Tape & Reel
MMBT3904LT1G SOT−23 3000 / Tape & Reel
MMBT3904LT3 SOT−23 10000 / Tape & Reel
MMBT3904LT3G SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 5
1
Publication Order Number:
MMBT3904LT1/D
1 page  
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
1.0
0.8
0.6
0.4
0.2
0
0.01
MMBT3904LT1
TYPICAL STATIC CHARACTERISTICS
TJ = +125°C
+25°C
−55 °C
VCE = 1.0 V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
IC = 1.0 mA
10 mA
30 mA
TJ = 25°C
100 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
2.0 3.0
5.0 7.0 10
1.2
TJ = 25°C
1.0
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
0.2
0
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
1.0
0.5
qVC FOR VCE(sat)
0
−0.5
−1.0
−1.5 qVB FOR VBE(sat)
+25°C TO +125°C
−55 °C TO +25°C
−55 °C TO +25°C
+25°C TO +125°C
−2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT3904LT3G.PDF ] | |
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