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PDF MMBT3904WT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904WT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
MMBT3904WT1/D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MMBT3904WT1
MMBT3906WT1
Collector – Base Voltage
MMBT3904WT1
MMBT3906WT1
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
TJ, Tstg
Value
40
–40
60
–40
6.0
–5.0
200
–200
Max
150
833
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
40
Vdc
—
–40 —
V(BR)CBO
60
Vdc
—
–40 —
V(BR)EBO
6.0
Vdc
—
–5.0 —
IBL nAdc
— 50
— –50
ICEX
—
nAdc
50
— –50
v v1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
MMBT3904WT1
200
100
70
50
30
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
5.0
10
100
50 MMBT3904WT1
20
10
5
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
20
10 MMBT3904WT1
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 13. Input Impedance
10
10
7.0 MMBT3904WT1
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page 
NPN MMBT3904WT1 PNP MMBT3906WT1
PACKAGE DIMENSIONS
A
L
3
S
1
B
2
VD
G
0.05 (0.002)
H
C RN
J
K
CASE 419–02
ISSUE G
SOT–323/SC–70
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.035 0.049
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
R 0.031 0.039
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.90 1.25
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
0.80 1.00
2.00 2.20
0.30 0.40
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MMBT3904WT1.PDF ] | |
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