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부품번호 | MMBTA70LT1 기능 |
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기능 | General Purpose Transistor | ||
제조업체 | Leshan Radio Company | ||
로고 | |||
전체 5 페이지수
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–40
–4.0
–100
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
mAdc
MMBTA70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –30Vdc, I E = 0)
ON CHARACTERISTICS
DC Current Gain(I C = –5.0mAdc, V CE = –10 Vdc)
Collector–Emitter Saturation Voltage(I C = –10mAdc, I B = –1.0 mAdc)
V (BR)CEO
V (BR)EBO
I CBO
hFE
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(I C = –5.0mAdc, V CE= –10Vdc, f = 100MHz)
Output Capacitance(V CB = –10Vdc, I E = 0, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
fT
C obo
Min
–40
–4.0
—
40
––
125
––
Max Unit
–– Vdc
—
–100
Vdc
nAdc
400
–0.25
––
Vdc
–– MHz
4.0 pF
M31–1/5
LESHAN RADIO COMPANY, LTD.
TYPICAL DYNAMIC CHARACTERISTICS
MMBTA70LT1
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
V CC = 3.0 V
I C /I B = 10
T J = 25°C
t d @ V BE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 11. Turn–On Time
500
T J = 25°C
300 V CE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
I C , COLLECTOR CURRENT (mA)
Figure 13. Current–Gain — Bandwidth Product
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1 0.2
h fe~~ 200
@ I C = –1.0 mA
V CE = –10 Vdc
f = 1.0 kHz
T A = 25°C
0.5 1.0 2.0
5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
1000
700 V CC = –3.0 V
500 I C /I B = 10
300
t s I B1 = I B2
T J = 25°C
200
100
70
50 t f
30
20
10
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30 –50 –70 –100
I C , COLLECTOR CURRENT (mA)
Figure 12. Turn–Off Time
10
T J = 25°C
7.0
C ib
5.0
3.0
2.0 C ob
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
V R , REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
50
200
V CE = 10 Vdc
100 f = 1.0 kHz
70 T A = 25°C
50
h fe ~~ 200
30
@ I C = 1.0 mA
20
10
7.0
5.0
3.0
2.0
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
I C , COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
M31–4/5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
MMBTA70LT1 | General Purpose Transistor | Motorola Semiconductors |
MMBTA70LT1 | General Purpose Transistor | Leshan Radio Company |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |