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부품번호 | MMBTH10LT1 기능 |
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기능 | VHF/UHF Transistor | ||
제조업체 | ON | ||
로고 | |||
전체 6 페이지수
MMBTH10LT1,
MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
Characteristic
Symbol
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1)
RθJA
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417 °C/W
−55 to
+150
°C
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
CASE 318
SOT−23
STYLE 6
ORDERING INFORMATION
Device
Package
Shipping†
MMBTH10LT1
MMBTH10LT1G
MMBTH10−4LT1
SOT−23
SOT−23
(Pb−Free)
SOT−23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
MMBTH10LT1/D
5.0
4.0
3.0
2.0
1.0
0
100
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
MMBTH10LT1, MMBTH10−4LT1
TYPICAL CHARACTERISTICS
COMMON−BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yrb, REVERSE TRANSFER ADMITTANCE
0
MPS H11
−1.0
100
200
−brb
−brb
MPS H10
−grb
200 300 400 500
f, FREQUENCY (MHz)
700
Figure 5. Rectangular Form
1000
−2.0 400
−3.0
700
−4.0
−5.0
−2.0 −1.8 −1.2 −0.8 −0.4
1000 MHz
0 0.4 0.8 1.2
1.6 2.0
grb (mmhos)
Figure 6. Polar Form
yob, OUTPUT ADMITTANCE
10
1000 MHz
8.0
700
6.0
bob
4.0 400
gob
200 300 400 500
f, FREQUENCY (MHz)
700
Figure 7. Rectangular Form
1000
200
2.0
100
0
0
2.0 4.0 6.0
gob (mmhos)
Figure 8. Polar Form
8.0
10
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4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ MMBTH10LT1.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MMBTH10LT1 | VHF/UHF Transistor | Motorola Semiconductors |
MMBTH10LT1 | VHF/UHF Transistor | ON |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |