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부품번호 | MMBTH11 기능 |
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기능 | NPN RF Transistor | ||
제조업체 | Fairchild | ||
로고 | |||
전체 8 페이지수
Discrete POWER & Signal
Technologies
MPSH11
MMBTH11
C
C
BE
TO-92
SOT-23
Mark: 3G
E
B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-base
VHF oscillator applications with high output levels for driving
FET mixers. Sourced from Process 47.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
3.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH11
350
2.8
125
*MMBTH11
225
1.8
357 556
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
Common Emitter Y Parameters
Input Admittance vs.
Collector Current
NPN RF Transistor
(continued)
Input Admittance vs.
Collector Current
Input Admittance vs.
Collector Voltage
Input Admittance vs. Frequency
Forward Transfer Admittance
vs. Collector Current
Forward Transfer Admittance
vs. Collector Current
4페이지 AC Typical Characteristics
NPN RF Transistor
(continued)
350
300
250
200
150
100
50
0
0
POWER DISSIPATION vs
AMBIENT TEMPERATURE
SOT-23
TO-92
25 50 75 100 125
TEMPERATURE (° C)
150
Test Circuits
VCC = 12 V
270 Ω
200 mHz
Input
1000 pF
100 pF
RS
L2
RL
1000 pF
L1
1000 pF
0.8-10 pF
200 mHz Output
into 50Ω
1000 pF
2.2 KΩ
V
BB
390 Ω
L1 - Ohmite Z-235 RFC
L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID
tapped 1 1/2 turns from cold side
FIGURE 1: Unneutralized 200 MHz PG NF Test Circuit
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |