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PDF MMBV105GLT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBV105GLT1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | ON | |
| Logotipo |  |
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ON Semiconductort
Silicon Tuning Diode
This device is designed in the Surface Mount package for general
frequency control and tuning applications. It provides solid–state
reliability in replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
VR 30
IF 200
PD 225
1.8
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ +125
Tstg –55 to +150
MMBV105GLT1 = M4E
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
MMBV105GLT1
ON Semiconductor Preferred Device
30 VOLT
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 28 Vdc)
Device Type
MMBV105GLT1
CT
VR = 25 Vdc, f = 1.0 MHz
pF
Min Max
1.5 2.8
3
Cathode
1
Anode
Symbol
V(BR)R
IR
Min
30
—
Max Unit
— Vdc
50 nAdc
Q
VR = 3.0 Vdc
f = 50 MHz
Typ
250
CR
C3/C25
f = 1.0 MHz
Min Max
4.0 6.5
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
MMBV105GLT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBV105GLT1.PDF ] | |
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