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PDF MMBZ12VAL Data sheet ( Hoja de datos )
| Número de pieza | MMBZ12VAL | |
| Descripción | 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors | |
| Fabricantes | ON | |
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MMBZ5V6ALT1 Series
Preferred Device
24 and 40 Watt Peak Power
Zener Transient Voltage
Suppressors
SOT−23 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
• Pb−Free Packages are Available
• SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range − 3 V to 26 V
• Standard Zener Breakdown Voltage Range − 5.6 V to 33 V
• Peak Power − 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
• Flammability Rating UL 94 V−O
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
http://onsemi.com
1
3
2
1
2
3 SOT−23
CASE 318
STYLE 12
MARKING
DIAGRAM
xxx
xxx = Device Code
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 7
1
Publication Order Number:
MMBZ5V6ALT1/D
1 page  
MMBZ5V6ALT1 Series
TYPICAL CHARACTERISTICS
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100 50% OF IPP.
PEAK VALUE − IPP
IPP
HALF VALUE − 2
50
tP
0
0
100
1 234
t, TIME (ms)
Figure 5. Pulse Waveform
MMBZ5V6ALT1
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
100
90
80
70
60
50
40
30
20
10
0
0
100
25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
MMBZ5V6ALT1
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
10
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1 10 100
PW, PULSE WIDTH (ms)
1000
Figure 7. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
1
0.1
1 10 100
PW, PULSE WIDTH (ms)
1000
Figure 8. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBZ12VAL.PDF ] | |
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