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PDF MMFT107T3 Data sheet ( Hoja de datos )

Número de pieza MMFT107T3
Descripción Power MOSFET 250 mA / 200 Volts
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MMFT107T1
Preferred Device
Power MOSFET
250 mA, 200 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDSS
VGS
ID
PD
200 Volts
±20 Volts
250 mAdc
0.8 Watts
6.4 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg –65 to
150
°C
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient
RθJA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260 °C
10 Sec
1. Device mounted on FR–4 glass epoxy printed circuit using minimum
recommended footprint.
http://onsemi.com
250 mA
200 VOLTS
RDS(on) = 14 W
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 TO–261AA
CASE 318E
STYLE 3
FT107
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT107T1
MMFT107T3
SOT–223 1000 Tape & Reel
SOT–223 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMFT107T1/D

1 page




MMFT107T3 pdf
MMFT107T1
160
140
°
120
100
Board Material = 0.0625
GĆ10/FRĆ4, 2 oz Copper
0.8 Watts
1.25 Watts*
TA = 25°C
1.5 Watts
*Mounted on the DPAK footprint
80
0.0 0.2 0.4 0.6 0.8 1.0
A, Area (square inches)
Figure 9. Thermal Resistance versus Collector
Pad Area for the SOT-223 Package (Typical)
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Cladt. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
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