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PDF MMFT1N10 Data sheet ( Hoja de datos )
| Número de pieza | MMFT1N10 | |
| Descripción | MEDIUM POWER TMOS FET 1 AMP 100 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMFT1N10E/D
Medium Power Field Effect Transistor
N–Channel Enhancement Mode
tSilicon Gate TMOS E–FET
SOT–223 for Surface Mount
This advanced E–FET is a TMOS Medium Power MOSFET
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient device also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
dc–dc converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.25 Ω max
• The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
1
G
®
2,4
D
S
3
MMFT1N10E
Motorola Preferred Device
MEDIUM POWER
TMOS FET
1 AMP
100 VOLTS
RDS(on) = 0.25 OHM
1
2
3
4
CASE 318E–04, STYLE 3
TO–261AA
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDS
VGS
ID
IDM
PD(1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG = 25 Ω)
TJ, Tstg
EAS
DEVICE MARKING
1N10
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TL
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Value
100
± 20
1
4
0.8
6.4
– 65 to 150
168
156
260
10
Unit
Vdc
Adc
Watts
mW/°C
°C
mJ
°C/W
°C
Sec
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoottoororolal,aInTc.M19O9S5 Power MOSFET Transistor Device Data
1
1 page  
15 V
VGS
0
90%
IS
10%
VDS
IFM dlS/dt
trr
ton IRM
tfrr
VDS(pk)
VR
0.25 IRM
Vf VdsL
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
MMFT1N10E
5
4.5 dIS/dt ≤ 400 A/µs
4
3.5
3
2.5
2
1.5
1
0.5
0
0 20 40 60 80 100 120 140
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 10. Commutating Safe Operating Area
(CSOA)
RGS
DUT
–
VR
+
VGS
IFM
+
IS
VDS
20 V
–
Li
VR = 80% OF RATED VDSS
VdsL = Vf + Li ⋅ dlS/dt
Figure 11. Commutating Safe Operating Area
Test Circuit
VDS
t RG
L
IL
VDD
Figure 12. Unclamped Inductive Switching
Test Circuit
BVDSS
IL(t)
VDD
tP t, (TIME)
Figure 13. Unclamped Inductive Switching
Waveforms
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MMFT1N10.PDF ] | |
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