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MMFT6N03HD 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document through
Power Products Marketing
Product Preview
HDTMOSSingle N-Channel
Field Effect Transistor
MMFT6N03HD
Medium Power Surface Mount Products
These medium power SOT–223 devices are an advanced series
of power MOSFETs which utilize Motorola’s High Cell Density
HDTMOS process. These surface mount MOSFETs feature low
RDS(on) and true logic level performance. They are capable of
withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse
recovery time. SOT–223 HDTMOS devices are designed for use in
low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters,
and power management in peripheral products such as printers
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
SOT–223 Saves Board Space and Height
Diode Is Characterized for Use In Bridge Circuits
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SOT–223 Package Provided
Use MMFT5N02HDT1 to order the 7 inch/1000 unit reel
Use MMFT5N02HDT3 to order the 13 inch/4000 unit reel
G
D
S
TMOS POWER FET
6.0 AMPERES
30 VOLTS
RDS(on) = 0.050 OHM
1
2
3
4
CASE 318E–04, Style 3
TO–261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
Gate–to–Source Voltage – Continuous
Drain Current – Continuous(1)
Drain Current – Continuous @ 100°C(1)
Drain Current – Single Pulse (tp 10 µs)(1)
Total PD @ TA = 25°C(1)
Total PD @ TA = 25°C(2)
VGS
ID
ID
IDM
PD
Operating and Storage Temperature Range
TJ, Tstg
Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 72 mH)
EAS
Thermal Resistance
– Junction to Ambient(1)
– Junction to Ambient(2)
RθJA
RθJA
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
TL
(1) When mounted on 1” sq. Drain pad on FR–4 bd material
(2) When mounted on minimum recommended Drain pad on FR–4 bd material
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
30
30
± 20
6.0
3.7
40
1.8
0.8
– 55 to 150
1300
70
156
260
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
°C/W
°C
© MMoototororloa,laIncT.M19O96S Power MOSFET Transistor Device Data
1




MMFT6N03HD pdf, 반도체, 판매, 대치품
MMFT6N03HD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
*MMFT6N03HD/D*4 Motorola TMOS Power MOSFET TransistoMrMDFeTv6icNe03DHaDta/D

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