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PDF MMFT960T1 Data sheet ( Hoja de datos )
| Número de pieza | MMFT960T1 | |
| Descripción | Power MOSFET 300 mA / 60 Volts | |
| Fabricantes | ON | |
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MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N–Channel SOT–223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc–dc converters,
solenoid and relay drivers. The device is housed in the SOT–223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage – Non–Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDS
VGS
ID
PD
60 Volts
±30 Volts
300 mAdc
0.8 Watts
6.4 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg –65 to
150
°C
THERMAL CHARACTERISTICS
Thermal Resistance –
Junction–to–Ambient
RθJA
156 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL 260 °C
10 Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum
recommended footprint.
http://onsemi.com
300 mA
60 VOLTS
RDS(on) = 1.7 W
N–Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 TO–261AA
CASE 318E
STYLE 3
FT960
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT960T1
SOT–223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMFT960T1/D
1 page  
MMFT960T1
160
140
° 120
100
Board Material = 0.0625″
GĆ10/FRĆ4, 2 oz Copper
0.8 Watts
1.25 Watts*
TA = 25°C
1.5 Watts
*Mounted on the DPAK footprint
80
0.0 0.2 0.4
0.6
0.8 1.0
A, Area (square inches)
Figure 9. Thermal Resistance versus Collector
Pad Area for the SOT-223 Package (Typical)
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Cladt. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT-223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMFT960T1.PDF ] | |
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