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MMG05N60D 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMG05N60D/D
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
Built–In Free Wheeling Diode
Built–In Gate Protection Zener Diode
Industry Standard Package (SOT223)
mHigh Speed Eoff: Typical 6.5 J @ IC = 0.3 A; TC = 125°C and
mdV/dt = 1000 V/ s
Robust High Voltage Termination
Robust Turn–Off SOA
C
MMG05N60D
POWERLUX
IGBT
0.5 A @ 25°C
600 V
1
2
3
4
G
E
1=G
2=4=C
3=E
CASE 318E–04
TO–261A
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameters
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
VCES
VCGR
VCGR
IC25
IC90
ICM
PD
TJ, Tstg
RθJC
RθJA
TL
600
600
± 15
0.5
0.3
2.0
1.0
– 55 to 150
30
150
260
Vdc
Vdc
Vdc
Adc
Watt
°C
°C/W
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC 150°C)
Single Pulse Drain–to–Source Avalanche
Energy – Starting @ TC = 25°C
Energy – Starting @ TC = 125°C
WVCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
EAS
mJ
125
40
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© MMoototororloa,laIncP.o19w9e7r Products Division Technical Data
1




MMG05N60D pdf, 반도체, 판매, 대치품
MMG05N60D
150
TC = 25°C
15
100 Cies
10
Coes
50
Cres
0
0 5.0 10 15 20
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
25
5.0 VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25°C
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
60
L = 3.0 mH
50 VCC = 300 V
VGE = 15 V
W40 RG = 25
mdV/dt = 1.0 kV/ s
30
125°C
20
25°C
10
0
0 0.5 1.0 1.5 2.0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Total Switching Losses versus
Collector–To–Emitter Current
20
L = 3.0 mH
VCC = 300 V
15 VGE = 15 V
WRG = 25
mdV/dt = 1.0 kV/ s
10
5.0
0.7 A
0.3 A
0
25
50 75 100 125
TC, CASE TEMPERATURE (°C)
150
Figure 10. Total Switching Losses versus
Case Temperature
2.5
2.0
1.5
1.0
TC = 125°C
WVGE = 15 V
0.5 RG = 25
L = 3.0 mH
0
0 100 200 300 400 500 600
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn–Off
Safe Operating Area
4 Motorola Power Products Division Technical Data

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MMG05N60D

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MMG05N60D

Insulated Gate Bipolar Transistor

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