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Número de pieza | MMG3002NT1 | |
Descripción | Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMG3002NT1/D
The RF MOSFET Line
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3002NT1 is a General Purpose Amplifier that is internally
input and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
Features
• Frequency: 40 - 3600 MHz
• P1dB: 21 dBm
• Power Gain: 20 dB
• Third Order Output Intercept Point: 37.5 dBm
• Single Voltage Supply
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• Pb - Free Leads
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3002NT1
40 - 3600 MHz, 20 dB
21 dBm
InGaP HBT
12 3
CASE 1514 - 01, STYLE 1
SOT - 89
PLASTIC
TYPICAL PERFORMANCE (1)
Characteristic
Symbol 900 2140
MHz MHz
Power Gain (S21)
Input Return Loss
(S11)
Gp 20 18
IRL - 16 - 26
Output Return Loss
(S22)
ORL
- 12 - 8
Power Output @
P1db 21 21
1dB Compression
Third Order Output
Intercept Point
IP3 37.5 36
(1) VCC = 5.2 Vdc, TC = 25°C, 50 ohm system
3500
MHz
14.5
- 16
- 11
18.5
32
Unit
dB
dB
dB
dBm
dBm
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (2)
VCC 7 V
Supply Current (2)
ICC 400 mA
RF Input Power
Pin 12 dBm
Storage Temperature Range
Tstg - 65 to +150 °C
Junction Temperature (3)
TJ 150 °C
(2) Voltage and current applied to device.
(3) For reliable operation, the junction temperature should not exceed
150°C.
THERMAL CHARACTERISTICS (VCC = 5.2 Vdc, ICC = 110 mA, TC = 25°C)
Characteristic
Symbol
Value (4)
Thermal Resistance, Junction to Case
RθJC
46.5
(4) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
Rev. 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
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MMG3002NT1
1
1 page Freescale Semiconductor, Inc.
50 OHM TYPICAL CHARACTERISTICS
42
39
36
33
30
900 MHz
100 kHz Tone Spacing
27
5 5.1 5.2 5.3 5.4
VCC, COLLECTOR VOLTAGE (V)
Figure 7. Third Order Output Intercept Point
versus Collector Voltage
41
40
39
38
37
VCC = 5.2 Vdc, ICC = 110 mA, 900 MHz
36 100 kHz Tone Spacing
8 Vdc Supply with 25 W Dropping Resistor
35
−40 −20 0 20 40 60 80 100
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point
versus Case Temperature
−30 105
−40
104
−50
−60
−70
−80
5
VCC = 5.2 Vdc
ICC = 110 mA
900 MHz
100 kHz Tone Spacing
7 9 11 13 15 17 19 21
Pout, OUTPUT POWER (dBm)
Figure 9. Third Order Intermodulation versus
Output Power
103
102
120 125
130 135 140 145 150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5.2 Vdc, ICC = 110 mA
Figure 10. MTTF versus Junction Temperature
8 −20
6
4
2
VCC = 5.2 Vdc
ICC = 110 mA
0
0 0.5 1 1.5 2 2.5 3 3.5 4
f, FREQUENCY (GHz)
Figure 11. Noise Figure versus Frequency
−30
−40
−50
−60
−70
9
VCC = 5.2 Vdc, ICC = 110 mA, f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
11 13 15 17 19
Pout, OUTPUT POWER (dBm)
Figure 12. Single - Carrier W - CDMA Adjacent
Channel Power Ratio versus Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MMG3002NT1
5
5 Page Freescale Semiconductor, Inc.
1.7
7.62
0.305 diameter
3.48
5.33
1.27
0.86
0.64
3.86
0.58
Recommended Solder Stencil
2.49
1.27 2.54
NOTES:
1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE
USED IN PCB LAYOUT DESIGN.
2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS
POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN.
3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN
AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO
THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL
AND RF PERFORMANCE.
4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM
PITCH.
Figure 22. Recommended Mounting Configuration
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MMG3002NT1
11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet MMG3002NT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
MMG3002NT1 | Heterojunction Bipolar Transistor Technology (InGaP HBT) | Motorola Semiconductors |
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