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기능 SOD-123 Schottky Barrier Diodes
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MMSD701T1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSD301T1/D
SOD-123 Schottky Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular
MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
1
Cathode
2
Anode
MAXIMUM RATINGS
Rating
Symbol
Reverse Voltage
MMSD301T1
MMSD701T1
VR
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
PF
TJ
Tstg
MMSD301T1 = XT, MMSD701T1 = XH
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 µA)
MMSD301T1
MMSD701T1
V(BR)R
30
70
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MMSD301T1
MMSD701T1
CT
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MMSD301T1
MMSD701T1
MMSD301T1
MMSD701T1
MMSD301T1
MMSD701T1
CT
IR
VF
MMSD301T1
MMSD701T1
Motorola Preferred Devices
2
1
CASE 425–04, STYLE 1
SOD–123
Value
30
70
225
– 55 to +125
– 55 to +150
Unit
Vdc
mW
°C
°C
Typ Max Unit
Volts
——
——
pF
0.9 1.5
0.5 1.0
pF
0.9 1.5
0.5 1.0
13 200 nAdc
9.0 200 nAdc
Vdc
0.38 0.45
0.52 0.6
0.42 0.5
0.7 1.0
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
replaces MMSD101T1/D
©MMoototorroollaa, ISncm. 1a9l9l–7Signal Transistors, FETs and Diodes Device Data
1




MMSD701T1 pdf, 반도체, 판매, 대치품
MMSD301T1 MMSD701T1
INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOD–123
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
0.91
0.036
ÉÉÉÉ 1.22
ÉÉÉÉ 0.048
ÉÉÉÉÉÉÉÉ2.36
0.093
4.19
0.165
mm
inches
SOD–123 POWER DISSIPATION
The power dissipation of the SOD–123 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOD–123
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
125°C – 25°C
444°C/W
= 225 milliwatts
The 444°C/W for the SOD–123 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOD–123 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

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