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87C257 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 87C257은 전자 산업 및 응용 분야에서
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부품번호 87C257 기능
기능 ADDRESS LATCHED 256K 32K x 8 UV EPROM and OTP EPROM
제조업체 STMicroelectronics
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87C257 데이터시트, 핀배열, 회로
M87C257
ADDRESS LATCHED
256K (32K x 8) UV EPROM and OTP EPROM
INTEGRATED ADDRESS LATCH
FAST ACCESS TIME: 45ns
LOW POWER “CMOS” CONSUMPTION:
– Active Current 30mA
– Standby Current 100µA
PROGRAMMING VOLTAGE: 12.75V
ELECTRONIC SIGNATURE for AUTOMATED
PROGRAMMING
PROGRAMMING TIMES of AROUND 3sec.
(PRESTO II ALGORITHM)
28
1
FDIP28W (F)
PLCC32 (C)
DESCRIPTION
The M87C257 is a high speed 262,144 bit UV
erasable and electrically programmable EPROM.
The M87C257 incorporates latches for all address
inputs to minimize chip count, reduce cost, and
simplify the design of multiplexed bus systems.
The Window Ceramic Frit-Seal Dual-in-Line pack-
age has a transparent lid which allows the user to
expose the chip to ultraviolet light to erase the bit
pattern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M87C257 is offered in Plastic Leaded Chip Carrier,
package.
Table 1. Signal Names
A0 - A14
Address Inputs
Q0 - Q7
Data Outputs
E Chip Enable
G Output Enable
ASVPP
VCC
VSS
Address Strobe / Program Supply
Supply Voltage
Ground
Figure 1. Logic Diagram
VCC
15
A0-A14
E
G
ASVPP
M87C257
VSS
8
Q0-Q7
AI00928B
June 1996
1/13




87C257 pdf, 반도체, 판매, 대치품
M87C257
Table 5. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
High Speed
10ns
0 to 3V
1.5V
Standard
20ns
0.4V to 2.4V
0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
0V
Standard
2.4V
0.4V
1.5V
2.0V
0.8V
AI01822
Figure 4. AC Testing Load Circuit
1.3V
1N914
DEVICE
UNDER
TEST
3.3k
OUT
CL = 30pF or 100pF
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
AI01823
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
CIN Input Capacitance
VIN = 0V
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
VOUT = 0V
Min Max Unit
6 pF
12 pF
System Considerations
The power switching characteristics of Advance
CMOS EPROMs require careful decoupling of the
devices. The supply current, ICC, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the falling and rising edges of E. The magnitude of
this transient current peaks is dependent on the
capacitive and inductive loading of the device at the
output. The associated transient voltage peaks can
be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7µF bulk electrolytic capacitor should be used
between VCC and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
4/13

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87C257 전자부품, 판매, 대치품
M87C257
Table 9. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol
Parameter
Test Condition Min Max
ILI Input Leakage Current
VIL VIN VIH
±10
ICC Supply Current
50
IPP Program Current
E = VIL
50
VIL Input Low Voltage
–0.3 0.8
VIH Input High Voltage
2 VCC + 0.5
VOL Output Low Voltage
IOL = 2.1mA
0.4
VOH Output High Voltage TTL
IOH = –1mA
VCC -0.8V
VID A9 Voltage
11.5
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
12.5
Unit
µA
mA
mA
V
V
V
V
V
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol Alt
Parameter
Test Condition
tAVEL
tAS Address Valid to Chip Enable Low
tQVEL
tDS Input Valid to Chip Enable Low
tVPHEL
tVPS VPP High to Chip Enable Low
tVCHEL
tVCS VCC High to Chip Enable Low
tELEH
tPW Chip Enable Program Pulse Width
tEHQX
tDH Chip Enable High to Input Transition
tQXGL
tOES Input Transition to Output Enable Low
tGLQV
tOE Output Enable Low to Output Valid
tGHQZ
tDFP Output Enable High to Output Hi-Z
tGHAX
tAH Output Enable High to Address Transition
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP
Min
2
2
2
2
95
2
2
0
0
Max
105
100
130
Unit
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M87C257 are in the "1"
state. Data is introduced by selectively program-
ming "0"s into the desired bit locations. Although
only "0"s will be programmed, both "1"s and "0"s
can be present in the data word. The only way to
change a "0" to a "1" is by die exposition to ultra-
violet light (UV EPROM). The M87C257 is in the
programming mode when VPP input is at 12.75V, G
is at VIH and E is pulsed to VIL. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. VCC is specified to
be 6.25 V ± 0.25 V.
7/13

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