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PDF PM75RLB060 Data sheet ( Hoja de datos )

Número de pieza PM75RLB060
Descripción MITSUBISHI INTELLIGENT POWER MODULES
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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No Preview Available ! PM75RLB060 Hoja de datos, Descripción, Manual

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLB060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75RLB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.5V @Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of
CSTBT chip, and error output is possible from all each con-
servation upper and lower arm of IPM.
c) New small package
Reduce the package size by 32%, thickness by 22% from
S-DASH series.
d) Current rating of brake part increased.
67% for the current rating of inverter part.
• 3φ 75A, 600V Current-sense IGBT type inverter
• 50A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• Acoustic noise-less 5.5kW/7.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
7
19.75
3.25
16
3-2
120
106 ±0.25
66.5
16 16
3-2 3-2
15.25
6-2
Dimensions in mm
17
2-φ5.5
16
MOUNTING HOLES
1.5
3
1 5 9 13 19
2.5
7.75
B UVW
44
19.5
22
23
44 44
23
98.25
23
44
19-s0.5
4-φ2.5
9.5
Terminal code
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. VWPC
10. WFO
11. WP
12. VWP1
13. VNC
14. VN1
15. Br
16. UN
17. VN
18. WN
19. Fo
Apr. 2004

1 page




PM75RLB060 pdf
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLB060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing SCtests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B)
P, (U,V,W)
VCIN
(0V)
IN
Fo
V Ic
VCIN
(15V)
IN
Fo
V Ic
VD (all) U,V,W, (N)
Fig. 1 VCE(sat) Test
VD (all) U,V,W,B, (N)
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
VCIN
(15V)
Signal input
(Upper Arm)
Fo
Signal input Fo
VCIN (Lower Arm)
P
U,V,W
CS
Vcc
trr
Irr
90%
Ic
VCE
90%
b) Upper Arm Switching VD (all)
Fo
VCIN Signal input
(Upper Arm)
VCIN
(15V)
Signal input
(Lower Arm)
Fo
VD (all)
N
Ic
P
10%
10%
tc(on)
10%
tc(off)
VCIN
U,V,W
CS Vcc td(on)
tr
td(off)
10%
tf
N
Ic
(ton= td(on) + tr)
(toff= td(off) + tf)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN
(15V)
P, (U,V,W,B)
A
IN
Fo Pulse VCE
U,V,W, (N)
VD (all)
Fig. 5 ICES Test
VCIN
Ic
Short Circuit Current
Constant Current
SC
Fo
toff(SC)
Fig. 6 SC test waveform
IPMinput signal VCIN
(Upper Arm)
0V
IPMinput signal VCIN
(Lower Arm)
0V
1.5V
2V
tdead
2V
1.5V
tdead
1.5V
2V
tdead
t
t
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
Apr. 2004

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