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PDF PMN28UN Data sheet ( Hoja de datos )
| Número de pieza | PMN28UN | |
| Descripción | TrenchMOS ultra low level FET | |
| Fabricantes | Philips | |
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PMN28UN
TrenchMOS™ ultra low level FET
Rev. 01 — 27 September 2002
M3D302
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN28UN in SOT457 (TSOP6).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Surface mount package.
3. Applications
s Battery powered motor control
s Load switch in notebook computers
s High speed switch in set top box power supplies
s Driver FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT457 (TSOP6), simplified outline and symbol
Pin Description
Simplified outline
1,2,5,6
3
drain (d)
gate (g)
654
4 source (s)
12 3
Top view
MBK092
SOT457 (TSOP6)
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
PMN28UN
TrenchMOS™ ultra low level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS
VDS = 10 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 2 A; Figure 7 and 8
VGS = 2.5 V; ID = 2 A; Figure 7 and 8
VGS = 1.8 V; ID = 1.5 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs gate-source charge
Qgd gate-drain (Miller) charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDD = 6 V; VGS = 4.5 V; ID = 3.8 A; Figure 13
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
VDD = 6 V; RD = 5.6 Ω; VGS = 4.5 V; RG = 6 Ω
VSD source-drain (diode forward) voltage IS = 1.7 A; VGS = 0 V; Figure 12
Min Typ Max Unit
12 -
-
0.4 0.7 -
V
V
- 0.01 1.0 µA
- - 10 µA
- 10 100 nA
- 28 34 mΩ
- 32 40 mΩ
- 39 56 mΩ
- 10.1 - nC
- 1.8 - nC
- 2.1 - nC
- 740 - pF
- 185 - pF
- 125 - pF
- 8 - ns
- 15 - ns
- 53 - ns
- 14 - ns
- 0.8 1.2 V
9397 750 10191
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
11. Data sheet status
PMN28UN
TrenchMOS™ ultra low level FET
Data sheet status[1]
Objective data
Preliminary data
Product data
Product status[2]
Development
Qualification
Production
Definition
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
9397 750 10191
Product data
Rev. 01 — 27 September 2002
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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