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PDF PN200 Data sheet ( Hoja de datos )
| Número de pieza | PN200 | |
| Descripción | PNP General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Discrete POWER & Signal
Technologies
PN200
PN200A
MMBT200
MMBT200A
C
C
BE
TO-92
SOT-23
Mark: N2 / N2A
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN200A
625
5.0
83.3
200
*MMBT200A
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PN200.PDF ] | |
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