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PDF PN4118A Data sheet ( Hoja de datos )

Número de pieza PN4118A
Descripción N-Channel JFETs
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! PN4118A Hoja de datos, Descripción, Manual

2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A PN4117A SST4117
2N4118A PN4118A SST4118
2N4119A PN4119A SST4119
PRODUCT SUMMARY
Part Number
4117
4118
4119
VGS(off) (V)
0.6 to 1.8
1 to 3
2 to 6
V(BR)GSS Min (V)
40
40
40
gfs Min (mS)
70
80
100
IDSS Min (mA)
30
80
200
FEATURES
D Ultra-Low Leakage: 0.2 pA
D Very Low Current/Voltage Operation
D Ultrahigh Input Impedance
D Low Noise
BENEFITS
D Insignificant Signal Loss/Error Voltage
with High-Impedance Source
D Low Power Consumption (Battery)
D Maximum Signal Output, Low Noise
D High Sensitivity to Low-Level Signals
APPLICATIONS
D High-Impedance Transducer
Amplifiers
D Smoke Detector Input
D Infrared Detector Amplifier
D Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-206AF
(TO-72)
S
1
C
4
2
D
3
Top View
2N4117A
2N4118A
2N4119A
G
For applications information see AN105.
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
TO-226AA
(TO-92)
D
1
S2
G
3
Top View
PN4117A
PN4118A
PN4119A
TO-236
(SOT-23)
D1
S2
3G
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
www.vishay.com
1

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PN4118A pdf
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
0.5
f = 1 MHz
0.4
Equivalent Input Noise Voltage vs. Frequency
200
VDS = 10 V
160
0.3 VDS = 0 V
0.2
10 V
0.1
120 ID = 10 mA
80
VGS = 0 V
40
0
0 4 8 12 16 20
VGS Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2
VGS(off) = 2.5 V
TA = 55_C
25_C
1
125_C
VDS = 10 V
f = 1 kHz
0
0.01
0.1
ID Drain Current (mA)
1
0
10
100 1 k 10 k
f Frequency (Hz)
On-Resistance vs. Drain Current
20
VGS(off) = 0.7 V
16
100 k
12
8
2.5 V
4
TA = 25_C
0
0.01
0.1
ID Drain Current (mA)
1
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
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