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PDF PNA2602M Data sheet ( Hoja de datos )
| Número de pieza | PNA2602M | |
| Descripción | Darlington Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
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Darlington Phototransistors
PNA2602M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Long lead and visible light cutoff design with PN205
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.5±0.2 4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
2-1.12
2-0.45±0.15
2-0.4±0.15
1.2
2-0.6±0.15
2-0.45±0.15
12
2.54
R1.75
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO
Sensitivity to infrared emitters SIR*1
VCE = 10V
VCE = 10V, H = 3.75 µW/cm2
0.1
0.5 µA
3.0 mA
Peak sensitivity wavelength λP VCE = 10V
850 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
35
deg.
Response time
tr, tf*2 VCC = 10V, IC = 1mA, RL = 100Ω
Collector saturation voltage VCE(sat)*1 IC = 100µA, H = 3.75 µW/cm2
150
1.5
µs
V
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Switching time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNA2602M.PDF ] | |
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