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Número de pieza | PNA2803M | |
Descripción | Darlington Phototransistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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No Preview Available ! Darlington Phototransistors
PNA2803M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)*3
λP
θ
VCE = 10V
VCE = 10V, L = 2 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.05
Response time
tr, tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 100 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
850
30
150
0.7
max
0.5
1.5
1.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (mA) 0.05 to 0.25
R
0.18 to 0.8
S
0.7 to 1.5
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet PNA2803M.PDF ] |
Número de pieza | Descripción | Fabricantes |
PNA2803M | Darlington Phototransistor | Panasonic Semiconductor |
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