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PDF PNA2W01M Data sheet ( Hoja de datos )
| Número de pieza | PNA2W01M | |
| Descripción | Darlington Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Darlington Phototransistors
PNA2W01M
Darlington Phototransistor
For optical control systems
s Features
• High sensitivity
• Easy to combine with red and infrared light emitting diodes
• Small size designed for easier mounting to printed circuit board
s Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
VCEO
VECO
IC
PC
Topr
Tstg
20
5
30
100
−25 to +85
−30 to +100
Unit
V
V
mA
mW
°C
°C
Unit: mm
Type number : Emitter mark (Black)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
φ1.8
1
2
1.8 2.8±0.2 1.8
R0.9
1: Collector
2: Emitter
s Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
ICEO
ICE(L)
λP
θ
tr , tf *2
VCE(sat)
VCE = 10 V
0.1 0.5
VCE = 10 V, L = 2 lx *1
0.5 3
VCE = 10 V
800
Measured from the optical axis to the
18
half power point
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
ICE(L) = 1 mA, L = 100 lx *1
200
0.7 1.5
µA
mA
nm
°
µs
V
Note) *1: Measurements were made using a tungsten lamp (color temperature T = 2856 K) as a light source.
*2: Switching time measurement circuit
Sig. in
50 Ω
VCC
(Input pulse)
Sig. out (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
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| PDF Descargar | [ Datasheet PNA2W01M.PDF ] | |
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