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PDF PNA4S02M Data sheet ( Hoja de datos )
| Número de pieza | PNA4S02M | |
| Descripción | Bipolar Integrated Circuit with Photodetection Function | |
| Fabricantes | Panasonic Semiconductor | |
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Photo IC
PNA4S01M Series
(PNA4S01M/4S02M/4S03M/4S04M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mouting type for reflow soldering
Metal shieldless
Space saved by miniaturization
Ready for automatic mounting
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
PD
Topr
Tstg
Ratings
– 0.5 to +7
200
–20 to +60
– 30 to +70
Unit
V
mW
˚C
˚C
Unit : mm
5.2
(2.6)
12
3.47
R1.7
34
1: VO
2: VCC
3: GND
4: GND
Main Characteristics (Ta = 25˚C VCC = 5V)
Parameter
Symbol
Conditions
min typ
Operating supply voltage VCC
Current consumption
ICC
Maximum reception distance Lmax*1
Low-level output voltage VOL*2
High-level output voltage VOH
Low-level pulse width
TWL*1
High-level pulse width
TWH*1
PNA4S01M
No signal condition
L≤5.0m, 10L=400µA
No signal condition
L=5.0m, 16Pulse
L=5.0m, 16Pulse
4.7 5.0
1.8 2.4
5.0
0.35
4.8 5.0
200 400
200 400
36.7
PNA4S02M
Carrier frequency
PNA4S03M
f0
38.0
40.0
PNA4S04M
56.9
*1 Fig.1 burst wave, L=Lmax, 16 pulses
*2 Fig.2 continuous wave, L≤Lmax
max
5.3
3.0
0.5
VCC
600
600
Unit
V
mA
m
V
V
µs
µs
kHz
Carrier wave : fo
Carrier wave : fo
400µs
400µs
Fig.1
Fig.2
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PNA4S02M.PDF ] | |
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