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PDF PNA4S13M Data sheet ( Hoja de datos )
| Número de pieza | PNA4S13M | |
| Descripción | Bipolar Integrated Circuit with Photodetection Function | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Photo IC
PNA4S11M Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
Unit : mm
5.2
(2.6)
12
3.47
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
PD
Topr
Tstg
Ratings
– 0.5 to +7
200
–20 to +60
– 30 to +70
Unit
V
mW
˚C
˚C
R1.7
34
1: VO
2: VCC
3: GND
4: GND
Main Characteristics (Ta = 25˚C VCC = 5V)
Parameter
Symbol
Conditions
min typ max
Operating supply voltage
Current consumption
Maximum reception distance
Low-level output voltage
High-level output voltage
Low-level pulse width
High-level pulse width
PNA4S11M
VCC
ICC
Lmax*1
VOL*2
VOH
TWL*1
TWH*1
No signal condition
L≤7.0m, 10L=400µA
No signal condition
L=7.0m, 16Pulse
L=7.0m, 16Pulse
4.7 5.0 5.3
1.8 2.4 3.0
7.0
0.35 0.5
4.8 5.0 VCC
200 400 600
200 400 600
36.7
PNA4S12M
Carrier frequency
PNA4S13M
f0
38.0
40.0
PNA4S14M
56.9
*1 Fig.1 burst wave, L=Lmax, 16 pulses
*2 Fig.2 continuous wave, L≤Lmax
Unit
V
mA
m
V
V
µs
µs
kHz
Carrier wave : fo
Carrier wave : fo
400µs
400µs
Fig.1
Fig.2
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PNA4S13M.PDF ] | |
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