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PDF PNZ109L Data sheet ( Hoja de datos )
| Número de pieza | PNZ109L | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
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Phototransistors
PNZ109L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx)
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices : λp = 900 nm (typ.)
Fast response : tr = 5 µs (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
ø4.6±0.15
Unit : mm
Glass lens
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
3.5
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100Ω
ICE(L) = 1mA, L = 500 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
10
5
6
0.3
max
2
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ109L.PDF ] | |
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