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PDF PNZ126S Data sheet ( Hoja de datos )
| Número de pieza | PNZ126S | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
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Phototransistors
PNZ126S
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.0±0.2
Unit : mm
Color indication ICE(L) rank
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
1 100 nA
Collector photo current
ICE(L)*3 VCE = 10V, L = 1000 lx*1
1050
2560 µA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
30
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100Ω
2.5
3.5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class Q R S T U
ICE(L) (µA) 1050 to1350 1260 to 1580 1480 to 1860 1730 to 2180 2030 to 2560
Color indication
Brown
Yellow
Pink
Black
Red
1
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| PDF Descargar | [ Datasheet PNZ126S.PDF ] | |
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