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PDF PNZ1270 Data sheet ( Hoja de datos )
| Número de pieza | PNZ1270 | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
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Phototransistors
PNZ1270
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
Unit : mm
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
1
2
1.8 2.8±0.2 1.8
R0.9
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
1 100 nA
Collector photo current
ICE(L)*3 VCE = 10V, L = 1000 lx*1
0.8 19.2 mA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
14
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100Ω
2.5
3.5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (mA)
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ1270.PDF ] | |
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