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PDF PNZ150L Data sheet ( Hoja de datos )
| Número de pieza | PNZ150L | |
| Descripción | Silicon NPN Phototransistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Phototransistors
PNZ150L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
IC
PC
Topr
Tstg
Ratings
20
20
100
–25 to +85
–30 to +100
Unit
V
mA
mW
˚C
˚C
4.5±0.3
ø3.5±0.2
Unit : mm
4.2±0.3
2.3 1.9
2-1.12
2-0.45±0.15
0.4±0.15
1.2
2-0.6±0.15
2-0.45±0.15
12
2.54
R1.75
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCEO = 10V
0.01 0.2 µA
Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 15µW/cm2
16
µA
Collector saturation voltage VCE(sat) VCE = 10V, H = 15µW/cm2
0.2 0.5 V
Peak sensitivity wavelength λP VCEO = 10V
800 nm
Response time
tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100Ω
4
µs
Acceptance half angle
θ Measured from the optical axis to the half power point
35
deg.
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Response time measurement circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
1 page | ||
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| PDF Descargar | [ Datasheet PNZ150L.PDF ] | |
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