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PDF PNZ3112 Data sheet ( Hoja de datos )
| Número de pieza | PNZ3112 | |
| Descripción | PIN Photodiode | |
| Fabricantes | Panasonic Semiconductor | |
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PIN Photodiodes
PNZ3112
PIN Photodiode
For optical control systems
Features
High sensitivity and low dark current
For one-dimensional light-point position detection
Good positional linearity
Small plastic package
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
VR 30
PD 30
Topr –25 to +85
Tstg –30 to +100
Unit
V
mW
˚C
˚C
5.0±0.1
2.54±0.1
43
Unit : mm
1.8±0.3
0.8±0.2
0.6±0.1
4-0.6
+0.1
–0.2
4-0.5±0.15
12
10˚ 10˚
0.2+–00..015
5˚ 5˚ 1: Anode A1
2: Common cathode
3: Anode A2
4: Common cathode
Dimensions of detection area
3.0 Unit : mm
2.5
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Resistance between electrodes
Gradient of position signal
ID
IL
λP
tr, tf*2
Ct
RS*3
a*4
VR = 1V
VR = 1V, L = 1000 lx*1
VR = 1V
VR = 1V, RL = 1kΩ
VR = 1V, f = 1MHz
VR = 1V, Va = 0.5V
VR = 1V
*1 IL = I1 + I2
Note: I1 and I2 are the photoelectric currents of anodes A1 and A2.
White tungsten lamp light source (color temperature T = 2856K)
*2 GaAs light emitting diode light source ( λ = 800nm)
*3 Va is the potential difference between anodes A1 and A2.
*4 a = | (I1–I2)/(I1+I2) |
Note :Incident light is at the position 100 µm from the reference position.
The reference position is the position where I1 = I2.
min typ max Unit
2 nA
16 20
µA
940 nm
10 µs
10 pF
120 kΩ
0.08
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ3112.PDF ] | |
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