|
|
PDF PNZ312D Data sheet ( Hoja de datos )
| Número de pieza | PNZ312D | |
| Descripción | Dual Division Silicon PIN Photodiode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PNZ312D (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
PIN Photodiodes
PNZ312D
Dual Division Silicon PIN Photodiode
For optical information systems
Features
Fast response : tr, tf = 10 ns (typ.)
Good photo current linearity
Low dark current : ID = 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VR
PD
Topr
Tstg
Ratings
30
30
–25 to +85
–30 to +100
Unit
V
mW
˚C
˚C
5.0±0.1
2.54±0.1
43
Unit : mm
1.8±0.3
1.0±0.2
AB
4-0.6
+0.1
–0.2
4-0.5±0.1
1
10˚
1.0
0.6
2
10˚
0.2
+0.1
–0.05
5˚ 5˚
1: Anode A
2: Common Cathode
3: Anode B
4: Common Cathode
Note) The PNZ312D package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Dimensions of detection area
3.5
1.6 1.6
0.04
Unit : mm
AB
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Reverse voltage (DC)
VR IR = 10µA
30 V
Dark current
Photo current
Peak sensitivity wavelength
Response time
ID
IL*3
λP
tr, tf*2
VR = 10V
VR = 10V, L = 1000 lx*1
VR = 10V
VR = 10V, RL = 1kΩ
20 nA
8 12
µA
940 nm
10 ns
Capacitance between pins Ct VR = 10V, f = 1MHz
5 pF
Acceptance half angle
θ Measured from the optical axis to the half power point
65
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics are the values
corresponding to individual elements.
*1 Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
*2 Semiconductor laser light source ( λ = 800 nm )
*3 Photo current measurement circuit
+10V
R1 R2
R1 = R2
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PNZ312D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PNZ312D | Dual Division Silicon PIN Photodiode | Panasonic Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |